Effect of Photo-Assisted RIE Damage on GaN
Z. Mouffak
Texas Center of Superconductivity and Advanced Materials, Department of
Physics,University of Houston
and
Department of Electrical and Computer Engineering, University of Houston
N. Medelci-Djezzar, C. Boney, A. Bensaoula
Texas Center of Superconductivity and Advanced Materials, Department of
Physics,University of Houston
L. Trombetta
Department of Electrical and Computer Engineering, University of Houston
This article was received on Friday, July 11, 2003 and
accepted on Friday, September 26, 2003. Abstract
Reactive Ion Etching (RIE) and Photo-Assisted RIE (PA-RIE) induced
damage in GaN using simple Schottky structures and a
BCl3/Cl2/N2 gas mixture have been
investigated. Schottky diode I-V characteristics following different RF powers
and exposure times show significant changes caused by damage. This damage
results in a reduction of the reverse breakdown voltage VB in n-type
GaN and an increase in VB for p-type GaN. Our preliminary data on
the PA-RIE process points to much reduced damage levels compared to
conventional RIE. This result may be due to a change in surface chemistry or to
a photo-enhanced diffusion of defects into the GaN layer, leaving a cleaner
near-surface region.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 8, 7(2003).
last updated Monday, September 29, 2003 6:59:12 PM.© 2003 The Materials Research Society
