Tables

Table I

 Hall effect results for Si-doped and Mg-doped a-plane GaN epilayers.
Effusion cell temperature Carrier Concentration Mobility
TSi = 1020°C 1x1018 cm-3 18 cm2/Vs
TMg = 350°C 3x1017 cm-3 5 cm2/Vs
TMg = 400°C 6x1017 cm-3 2 cm2/V 
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