Tables
Table 1
Thermal Boundary Resistance at 300K
SiC
Sapphire
AlN
R
Bd
, [10
-9
m
2
K/W], Wurtzite GaN along [0 0 1]
1.2
1.0
0.98
R
Bd
, [10
-9
m
2
K/W], Wurtzite GaN along [1 0 0]
0.91
0.76
0.74
top
main text
figures
endnotes
last updated Monday, November 22, 2004 11:22:05 AM.
© 2003-2004 The Materials Research Society
