Temperature maximum in the drain-gate opening as function of the thermal boundary resistance for the GaN/SiC interface (dissipated power is P/W = 10W/mm) and for GaN/Sapphire interface (dissipated power is P/W = 2.5W/mm). The results are shown for the two different HFETs with L=250nm heat-source length (blue curves) and L=1mm (black curves).
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