Figure 3

Temperature profiles in GaN/AlGaN HFETs on SiC substrate for two different values of the thermal boundary resistance. Left panel shows the results for R = 1.2 10^-9 m²K/W, right panel shows the results for R = 1.2 10^-8 m²K/W. The dissipated power is P = 12 W/mm in both cases. Note the different temperature scale in two figures.

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