The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
K.A. Filippov, A.A. Balandin
Nano-Device Laboratory, Department of Electrical Engineering, University of California - Riverside
This article was received on Friday, May 23, 2003 and
accepted on Friday, July 25, 2003. Abstract
We
have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire
and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained
values were then used to examine the effect of the thermal boundary resistance
on heat diffusion in AlGaN/GaN heterostructure field-effect transistors. The
results show that the thermal boundary resistance at the device layer
interfaces can strongly influence the temperature rise in the device channel.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 8, 4(2003).
last updated Monday, November 22, 2004 11:19:57 AM.© 2003-2004 The Materials Research Society
