Figure 7

Phase diagrams for GaAs (a), CdTe (b), GaN (c), and ZnO (d) based microcavities.
Vertical and horizontal dashed lines show the limits of the strong-coupling regime imposed by the exciton thermal broadening and screening, respectively. Solid lines show the critical concentration N_c versus temperature of the polariton KT phase transition. Dotted and dashed lines show the critical concentration N_c for quasi condensation in 100 µm and 1 meter lateral size systems, respectively. The thin dotted line symbolizes the limit between vertical cavity surface emitting laser (VCSEL) and light-emitting diode regimes.

(click for full image)

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