High-Performance Solar-Blind AlGaN Schottky Photodiodes
Necmi Biyikli, Tolga Kartaloglu, Orhan Aytur
Bilkent University Dept. of Electrical and Electronics Engineering
Ibrahim Kimukin, Ekmel Ozbay
Bilkent University Dept. of Physics
This article was received on Friday, January 10, 2003 and
accepted on Tuesday, February 25, 2003. Abstract
High-performance
solar-blind AlGaN-based Schottky photodiodes have been demonstrated. The
detectors were fabricated on MOCVD-grown AlGaN/GaN hetero-structures using a
microwave-compatible fabrication process. Current-voltage, spectral
responsivity, noise, and high-speed characteristics of the detectors were
measured and analyzed. Dark currents lower than 1 pA at bias voltages as high
as 30 V were obtained. True solar-blind detection was achieved with a cut-off
wavelength lower than 266 nm. A peak device responsivity of 78 mA/W at 250 nm
was measured under 15 V reverse bias. A visible rejection of more than 4 orders
of magnitude was observed. The solar-blind photodiodes exhibited noise
densities below the measurement setup noise floor of 3x10-29
A2/Hz around 10 KHz. High-speed measurements at the solar-blind
wavelength of 267 nm resulted in 3-dB bandwidths as high as 870 MHz. Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 8, 2(2003).
last updated Tuesday, February 10, 2004 5:36:00 PM.© 2003-2004 The Materials Research Society
