MIJ-NSR Vol. 8, Art. 1, N.N. Syrbu et al.

Free excitons in strained MOCVD-grown GaN layers

N.N. Syrbu, I.M. Tiginyanu, V.V. Ursaki, V.V. Zalamai
Technical University of Moldova

Veaceslav Popa , S.M. Hubbard, Dimitris Pavlidis
The University of Michigan

This article was received on Tuesday, November 26, 2002 and accepted on Monday, February 3, 2003.

Abstract

GaN layers grown on sapphire substrates were characterized using high resolution optical reflectivity and absorption spectroscopy in the region of ground and excited exciton states. The main exciton parameters are deduced from calculations of reflectivity contours for A and B exciton S-states. The parameters of the

₅ state of the A-exciton as well as those of the

₅ and

₁ states of the B-exciton are determined from a comparative analysis of reflectivity and absorption spectra in thin layers. The influence of strains inherent to MOCVD-grown GaN layers on the exciton parameters including effective masses and longitudinal-transverse splitting is discussed. Electron transitions from the three (

₉,

₇,

₇) upper valence bands to the second E_c2 conduction band of

₃ symmetry were evidenced.

Outline

Introduction

Experimental

Results and discussion

Acknowledgments

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 8, 1(2003).

last updated Monday, February 10, 2003 4:03:29 PM.