Figures

Figure 1a

RBS/C spectra of GaN implanted with 150 keV Ar+ to the dose of 3x1015 cm-2 at different temperatures: RT - (red), 150 °C - ^ (green), 300 °C - (dark blue), 500 °C - + (light blue). Black solid line corresponds to an unimplanted sample.

Figure 1b

RBS/C spectra of GaN implanted with 150 keV Ar+ to the dose of 3x1015 cm-2 at different temperatures: 500 °C - + (light blue), 600 °C - (dark blue), 700 °C - (green). Black solid line corresponds to an unimplanted sample.

Figure 1c

RBS/C spectra of GaN implanted with 150 keV Ar+ to the dose of 3x1015 cm-2 at different temperatures: 700 °C - (green;, 800 °C - (red), 900 °C - * (dark blue), 1000 °C - (light blue). Black solid line corresponds to an unimplanted sample.

Figure 2a

The depth distribution of damage, Nd(z), in GaN implanted with 150 keV Ar+ at different implantation temperatures obtained using equation 1: RT - (red), 150 °C - o (green), 300 °C - (dark blue), 500 °C - + (light blue).

Figure 2b

The depth distribution of damage, Nd(z), in GaN implanted with 150 keV Ar+ at different implantation temperatures obtained using equation 1: 500 °C - + (light blue), 600 °C - (dark blue), 700 °C - (green).

Figure 2c

The depth distribution of damage, Nd(z), in GaN implanted with 150 keV Ar+ at different implantation temperatures obtained using equation 1: 700 °C - (green), 800 °C - (red), 900 °C - * (dark blue), 1000 °C - (light blue).

Figure 3

The integrated damage in the bulk peak, Id, and the height of the surface peak, Hsp, as a function of the implantation temperature for two dose rates: 0.45 and 4.5µA/cm2.

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