Figure 2a

The depth distribution of damage, N_d(z), in GaN implanted with 150 keV Ar⁺ at different implantation temperatures obtained using equation 1: RT - (red), 150 °C - o (green), 300 °C - (dark blue), 500 °C - + (light blue).

Figure 2b

The depth distribution of damage, N_d(z), in GaN implanted with 150 keV Ar⁺ at different implantation temperatures obtained using equation 1: 500 °C - + (light blue), 600 °C - (dark blue), 700 °C - (green).

Figure 2c

The depth distribution of damage, N_d(z), in GaN implanted with 150 keV Ar⁺ at different implantation temperatures obtained using equation 1: 700 °C - (green), 800 °C - (red), 900 °C - * (dark blue), 1000 °C - (light blue).

top        text     Figure 1     Figure 3        endnotes

© 2002-2004 The Materials Research Society