Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN
I. Usov, N. Parikh
Curriculum in Applied and Materials Sciences, University of North Carolina at Chapel Hill
D.B. Thomson, Robert F. Davis
Department of Materials Science and Engineering, North Carolina State University
This article was received on Wednesday, October 9, 2002 and
accepted on Tuesday, December 17, 2002. Abstract
A
systematic investigation of damage accumulation in GaN films induced by
Ar+ as a function of implantation temperature and dose rate has been
conducted. Depth distribution of disorder was measured by Rutherford
Backscattering/Channeling spectrometry. Two disordered regions were identified
in the damage depth distribution: a surface peak and a bulk damage peak. These
regions exhibited different behavior as a function of implantation temperature.
The displaced atomic density in the bulk damage peak displayed a "reverse
annealing" behavior in temperature range from 500 °C to 700
°C, which we attributed to formation of characteristic secondary
defects. The influence of implantation temperature and dose rate on the
radiation damage accumulation is discussed.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 7, 9(2002).
last updated Wednesday, December 8, 2004 4:47:47 PM.© 2002-2004 The Materials Research Society
