MIJ-NSR Vol. 7, Art. 8, E. Frayssinet et al.

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

This article was received on Tuesday, November 5, 2002 and accepted on Monday, December 9, 2002.

Abstract

GaN/sapphire layers have been grown by Metal Organic Vapour Phase Epitaxy (MOVPE). An amorphous silicon nitride layer is deposited using a SiH₄/NH₃ mixture prior to the growth of the low temperature GaN buffer layer. Such a process induces a 3D nucleation at the early beginning of the growth, resulting in a kind of maskless ELO process with random opening sizes. This produces a significant decrease of the threading dislocation (TD) density compared to the best GaN/sapphire templates. Ultra Low Dislocation density (ULD) GaN layers were obtained with TD density as low as 7x10⁷cm^-2 as measured by atomic force microscopy (AFM), cathodoluminescence and transmission electron microscopy (TEM). Time-resolved photoluminescence experiments show that the lifetime of the A free exciton is principally limited by capture onto residual donors, similar to the situation for nearly dislocation-free homoepitaxial layers.

Outline

Introduction

Experimental

3D growth mode

Improvement of the Si/N treatment

In depth characterisation

High resolution transmission electron microscopy

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 7, 8(2002).

last updated Monday, December 9, 2002 10:46:32 PM.