Tables for MIJ-NSR Volume 7, Article 6

Tables

Table 1

Hardness of III-V nitrides at room temperature together with phase transition pressure, bonding distance, and shear modulus. InN and In_0.1Ga_0.9N grown on sapphire substrate.

Crystal	Micro-hardness (GPa)	Nano-hardness (GPa)	Phase transition pressure (GPa)	Bonding distance (nm)	Shear modulus (GPa)
AlN	17.7	18	22.9 [19]	0.192	154 [8]
GaN	10.2	18-20 [14]	52 [20]	0.196	121 [29]
InN on sapphire		11.2 [15]	15 [20]	0.214	43 [30]
In_0.1Ga_0.9N on sapphire		52 [16]
Si	12.0	14 [17]	11.3 [18]	0.235	60.5

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