Vickers hardness of bulk single-crystal GaN and AlN plotted against reciprocal temperature, with an applied load of 0.5 N and dwell time of 30 s, together with those of 6H-SiC, Si, Ge, GaP, GaAs, and ZnSe. RT means room temperature.
Vickers hardness plotted against the yield strength at 700°C for cubic type semiconductors as Si [23], Ge [26], GaP [27], and GaAs [24], and at 1000°C for GaN [25] and SiC [28]. Here, the yield strength of SiC is extrapolated based on the measured results in the temperature range 1300-1800°C.
© 2002 The Materials Research Society
