Hardness of bulk single-crystal GaN and AlN
Ichiro Yonenaga
Institute for Materials Research, Tohoku University
This article was received on Friday, August 9, 2002 and
accepted on Wednesday, September 18, 2002. Abstract
The
hardness of single-crystal GaN and AlN of 0.5-mm-thickness was measured by the
Vickers indentation method in the temperature range 20 - 1400°C. The
hardness of GaN and AlN is 10.2 and 17.7 GPa, respectively, at room
temperature. The nano-indentation hardness of single-crystal AlN was measured
at room temperature as 18 GPa, harder than GaN and InN. Up to about
1100°C, GaN and AlN maintain its hardness similar to that of SiC and
thus, a high mechanical stability for GaN and AlN at elevated temperatures is
deduced. Yield strength of nitrides is discussed. Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 7, 6(2002).
last updated Monday, September 23, 2002 11:13:22 AM.© 2002 The Materials Research Society
