Etch rate of polycrystalline AlN in 45wt% KOH as function of time, at 60 °C.
Sample A before (a) and after (b,c,d) etching. (a) before etching; (b) after etching; (c) enlarged image of circle in (a) after etching; and (d) enlarged image of circle in (b) after etching
Sample B before and after etching. (a) before etching; (b) after etching; (c) higher magnification of circle area in (a); (d) after additional 20 minute etch; (e) hillock in (d); (f) one side of vertically placed crystal; (g) the other side of vertical crystal; and (h) higher magnification of (g)
Crystal produced by microwave, after 10 minute etching
AlN crystal grown on SiC substrate for 10 minute etching. (a) before etching; and (b) after etching