D. Zhuang, J.H. Edgar, Lianghong Liu, B. Liu
Department of Chemical Engineering, Kansas State University
L. Walker
Metals and Ceramics Division,
Oak Ridge National Laboratory
00)
planes were not etched. The etch rate of the nitrogen polarity basal plane
eventually decreased to zero, as the surface became completely covered with
hexagonal hillocks which were bounded by {101}
planes. The hillock density for the self-seeded AlN crystals studied was
typically in the range of 5x107 cm-2
to 109 cm-2.
From our analysis of etched AlN crystals, we infer that freely nucleated
crystals predominately have the nitrogen to aluminum direction pointing out
from the nucleation surface, that is the ends of the AlN crystals facing the
source are aluminum polarity.© 2002-2004 The Materials Research Society