). For the 3x3 structure, the lateral (in-plane) displacement of the adlayer atoms bonded to the Ga adatom is 0.51 Å away from the adatom. All other lateral or vertical displacements of the adlayer atoms are less than 0.1 Å. (From [30]). Schematic view of structures determined for the (a) 1x1 Ga adlayer and (b) 3x3 adatom-on-adlayer reconstructions of GaN(000). For the 3x3 structure, the lateral (in-plane) displacement of the adlayer atoms bonded to the Ga adatom is 0.51 Å away from the adatom. All other lateral or vertical displacements of the adlayer atoms are less than 0.1 Å. (From [30]).
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