Schematic sideview of the energetically favorable structures for bare and Si-covered GaN(0001) surfaces. (a) N terminated with a Si subsurface, (b) Ga bilayer, (c) Ga bilayer with a Si subsurface, (d) Ga adatom, (e) N adatom, (f) Ga adatom with a Si subsurface, and (g) 2 ML of Si. See, also, Figure 23. (From [66]).