STM image of a GaN(0001) surface following
1 ML silicon exposure. (a) Large scale image displaying terraces of "1x1" reconstruction with 4x4 structure seen at the terrace edges. (b) High resolution view of 4x4 structure near a terrace edge. Images were both acquired with a sample bias voltages of +2.0 V, and are shown with gray-scale ranges of 13 and 2.1 Å, respectively. (From [65]).