Figure 21

STM images of GaN(0001) surface exposed to approxequal 0.5 ML of silicon. (a) Surface region showing Si-induced 2x2 reconstruction and the 5x5 reconstruction of the bare surface. (b) Two different types of domains (seen on the left and right sides of the image) of the 2x2 structures. Images were acquired with sample bias voltages of -2.5 V and -2.0 V, respectively, and are shown with gray-scale ranges of 1.3 and 1.0 Å, respectively. (From [65]).


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