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(a) Bright field TEM image in (0002) two-beam condition of a MBE-grown GaN film grown on SiC showing inversion boundary labeled with solid arrowheads and growth interrupts labeled with hollow arrowheads. (b) High-resolution image of the same sample as in (a). Brackets indicate the region of the inversion boundary. (c) Bright field (0002) two-beam TEM image of a MOCVD-grown GaN film showing inversion domains (ID). Regrowth interface is indicated by arrows. (From [60]).
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