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(a) Top view of the 7/4 structure comprised of 7/4 ML of In. In this 2x2 structure there is 3/4 ML of In and 1/4 ML Ga in layer 2. Layer 1 (not shown) contains 1 ML of In atoms. (b) Top view of the 7/4 + N-vacancy structure, obtained from the 7/4 structure by removing N atoms from layer 3. (c) Side view of a trench created by removing three rows of N atoms (layer 3) and two rows of In atoms (layer 1). Formation of this trench leads to substantial lateral displacements of the atoms in layers 2 and 3, shown in Å. Indium atoms in sites 1 and 2 are bonded to 1 and 2 N-atoms respectively. (From [51]).
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