Figures

Figure 1

AFM images of 6H-SiC(0001) surfaces: (a) on-axis, as-received; (b) on-axis, H-etched; (c) off-axis, 3.5° towards [1 [1  0 0], H-etched; (d) off-axis, 3.5° towards [1 1  0], H-etched. Gray scale ranges are (a) 10 nm, (b) 0.7 nm, (c) 7 nm, and (d) 1 nm. Note the varying lateral scales.

Figure 2

AFM images of GaN(0001) films grown on H-etched 6H-SiC, with Ga/N flux ratios of (a) 1.05, (b) 1.1, (c) 1.3, and (c) 1.6. The gray scale ranges are 210 nm, 86 nm, 5 nm, and 5 nm for (a)-(d) respectively. The film pictured in (a) was grown at 800°C and the other films were grown at 750°C. In (a), a line cut taken between the arrows is shown in the inset.

Figure 3

AFM images of GaN(0001) films grown on H-etched miscut SiC, with Ga/N ratio of 1.5 for both films. Substrates used are: (a) off-axis, 3.5° towards [1  0 0], and (b) off-axis, 3.5° towards [1 1  0]. Gray scale ranges are (a) 15 nm and (b) 12 nm. Linescan profiles taken across the middle of each image are shown below the images (a linear background subtraction has been applied to all images and linescans).

© 2002 The Materials Research Society