Figure 3

AFM images of GaN(0001) films grown on H-etched miscut SiC, with Ga/N ratio of 1.5 for both films. Substrates used are: (a) off-axis, 3.5° towards [1  0 0], and (b) off-axis, 3.5° towards [1 1  0]. Gray scale ranges are (a) 15 nm and (b) 12 nm. Linescan profiles taken across the middle of each image are shown below the images (a linear background subtraction has been applied to all images and linescans).

(click for full image)

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