Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)


C. D. Lee, R. M. Feenstra
Department of Physics, Carnegie Mellon University

O. Shigiltchoff, R. P. Devaty, W. J. Choyke
Department of Physics and Astronomy, University of Pittsburgh

This article was received on Monday, January 14, 2002 and accepted on Thursday, February 21, 2002.

Abstract

Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6H-SiC(0001) substrates with no miscut and with 3.5° miscuts in both the [1 (-1) 0 0] and [1 1 (-2) 0] directions. The hydrogen-etched substrates display straight or chevron shaped steps, respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films on the vicinal substrates compared to singular substrates, for the same Ga/N flux ratio used during growth.

Outline

  • Introduction
  • Experimental
  • Results & Discussion
  • Morphology of H-etched SiC substrates
  • GaN films on H-etched SiC
  • Summary
  • Acknowledgments

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    Cite this article as: MRS Internet J. Nitride Semicond. Res. 7, 2(2002).

    last updated Sunday, February 24, 2002 10:35:05 AM.

    © 2002 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research