Figures

Figure 1a

A schematic picture depicting the incorporation of Ga by Mg and N described in 2.2.

Figure 1b

A schematic picture depicting the formation of Ga droplets due to excess Ga arriving on surface described in section 2.2.

Figure 1c

A schematic picture depicting the segregation of Mg to the surface due to strain forcing Mg to migrate to the surface and two competing surface processes described in 2.2.

Figure 1d

A schematic picture depicting the surface processes resulting in growth rate saturation described in 2.2.

Figure 2

Calculated and experimental growth rate versus Ga flux for the TMg cell temperature of 0°C corresponding to a CMg of 0. Coverage of Ga plotted as well.

Figure 3

Calculated and experimental growth rate versus Ga flux for residual Mg in the MBE system corresponding to a CMg of 0.05. Coverage of Ga plotted as well.

Figure 4

Calculated and experimental growth rate versus Ga flux for the TMg cell temperature of 212°C corresponding to a CMg of 0.10. Coverage of Ga plotted as well.

Figure 5

Calculated and experimental growth rate versus Ga flux for the TMg cell temperature of 220°C corresponding to a CMg of 0.15. Coverage of Ga plotted as well.

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