Volume 7

R. M. Feenstra, Editor in Chief

K. Hiramatsu, Associate Editor in Chief, January-March

Published 2002. A keyword index and an author index are also available.

1. Modeling GaN Growth by Plasma Assisted MBE in the Presence of Low Mg Flux
Nathan Sipe, Rama Venkat.
2. Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)
C. D. Lee, R. M. Feenstra, O. Shigiltchoff, R. P. Devaty, W. J. Choyke.
3. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
R. M. Feenstra, J. E. Northrup, Jörg Neugebauer.
4. Wet Chemical Etching of AlN Single Crystals
D. Zhuang, J.H. Edgar, Lianghong Liu, B. Liu, L. Walker.
5. Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
A. Petersson, Anders Gustafsson , L. Samuelson, Satoru Tanaka , Yoshinobu Aoyagi.
6. Hardness of bulk single-crystal GaN and AlN
Ichiro Yonenaga.
7. Photoluminescence in n-doped In_0.1Ga_0.9N/In_0.01Ga_0.99N multiple quantum wells
B. Monemar, P.P.Paskov, J. P. Bergman, G. Pozina, V. Darakchieva, M. Iwaya, Satoshi Kamiyama, H. Amano, I. Akasaki.
8. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
E. Frayssinet, B. Beaumont, J. P. Faurie, Pierre GIBART, Zs. Makkai, B. Pécz, P. Lefebvre, P. Valvin.
9. Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN
I. Usov, N. Parikh, D.B. Thomson, Robert F. Davis.