Figures

Figure 1

TEM image of the film/substrate of a 300 µm thick GaN film grown by HVPE.

Figure 2ab

Images of a 300 µm thick GaN film grown by HVPE. (2a, left) TEM of GaN surface, (2b, right) EPD.

Figure 2c

Micro PL for the 300 µm thick GaN film grown by HVPE

Figure 3ab

Micro PL mapping images of the dislocation density of GaN films with the variation of thickness. (3a, left) 3 µm GaN film, (3b, right) 300 µm GaN film

Figure 3cd

Micro PL mapping images of the dislocation density of GaN films with the variation of thickness. (3c, left) 500 µm GaN film, (3d, right) 750 µm GaN film

Figure 4

Correlation between the thickness and the dislocation density of GaN films grown by HVPE on sapphire substrates

© 2001-2004 The Materials Research Society