Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy
Kyoyeol Lee
Samsung Advanced Institute of Technology
and
Ceramic Materials Research Institute, Hanyang University
Keunho Auh
Ceramic Materials Research Institute, Hanyang University
This article was received on Saturday, October 14, 2000 and
accepted on Saturday, April 28, 2001. Abstract
We have investigated the dislocation of GaN films grown by hydride
vapor phase epitaxy (HVPE) on c-plane sapphire substrates using transmission
electron microscopy (TEM), etch pit density (EPD) characteristics, and micro
photoluminescence (PL). Micro PL mapping is a nondestructive method for
observing defect sites as dark spots which reveal the dislocations causing
non-radiative recombination centers in the GaN film surface. The dark spots
reveal a decrease in threading dislocation sites with increasing the thickness
of GaN films. In order to illustrate the correlation between the thickness and
the dislocation density of GaN, the micro PL analysis method was used to
observe the dislocation densities of a GaN film with a low dislocation
density.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 6, 9(2001).
last updated Wednesday, December 8, 2004 3:33:09 PM.© 2001-2004 The Materials Research Society
