Figures

Figure 1

Schematic view of AlN sublimation growth system

Figure 2

Optical micrograph of AlN crystal surface grown on on-axis, as-received (0001) 6H-SiC substrate at 1780 °C and 400 torr for 40 hours with the magnification100x (The real width of the crystal in above image is 1.0 mm).

Figure 3

SEM of AlN crystal surface grown on on-axis as-received (0001) 6H-SiC substrate at 1780 °C and 400 torr for40 hours with the magnification 2000x.

Figure 4

Optical micrograph of AlN crystal grown on as-received (0001) 6H-SiC substrate at 1780°C, 400 torr for 2 hours with magnification 100x: (a) on-axis (b) off-axis. (The real width of crystal in above image is 1.0 mm).

Figure 5

AlN bulk crystals peeled off from the on-axis, as-received (0001) 6H-SiC substrate on which they were deposited. The crystals were grown at 1780°C and 400 torr for 40 hours (grid size is 1 mm)

Figure 6

SEM of AlN grown on on-axis as-received (0001) 6H-SiC substrate at 1890°C and 400 torr for 20 hours with magnification 20x (real width of above crystal is 1.0 cm).

Figure 7

Optical micrograph of AlN crystal surface grown at 1780°C and 400 torr on (0001) 6H-SiC substrate for 10 hours with an AlN epitaxial layer. The magnification is 100x: (a) on-axis, (b) 8o off-axis. (The real width of crystal in above image is about 1.0 mm).

Figure 8

Optical micrograph of AlN crystal grown at 1780°C, 400 torr for 2 hours on (0001) 6H-SiC substrate with an AlN epitaxial layer. The magnification is 1003: (a) on-axis (b) 8o off-axis. (The real width of crystal in above image is about 1.0 mm).

Figure 9

AlN bulk crystal grown on on-axis AlN-buffered (0001) 6H-SiC substrate at 1780°C and 400 torr for 40 hours (grid size is 1 mm, left big pieces with darker color are peeled SiC substrate, other smaller ones with light color are peeled AlN).

Figure 10

Optical micrograph of AlN crystal grown at 1870°C, 400 torr for 2 hours on on-axis (0001) 6H-SiC substrate with about 1 µm SiC epitaxial layer. The magnification is 1003: (a) on-axis; (b) 8o off-axis. (The real width of film in above image is about 1.0mm).

Figure 11

SEM of AlN grown on 8o off-axis (0001) 6H-SiC substrate with about 1 µm SiC epitaxial layer at 1870°C, 400 torr for 2 hours with magnification 2000: (a) 200times (b) 2000x.

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