Optical micrograph of AlN crystal surface grown at 1780°C and 400 torr on (0001) 6H-SiC substrate for 10 hours with an AlN epitaxial layer. The magnification is 100x: (a) on-axis, (b) 8o off-axis. (The real width of crystal in above image is about 1.0 mm).
© 2001-2003 The Materials Research Society
