Figure 4

Optical micrograph of AlN crystal grown on as-received (0001) 6H-SiC substrate at 1780°C, 400 torr for 2 hours with magnification 100x: (a) on-axis (b) off-axis. (The real width of crystal in above image is 1.0 mm).


top        text     Figure 3     Figure 5        tables        endnotes

last updated Friday, August 15, 2003 11:03:09 AM.

© 2001-2003 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research