Figure 10

Optical micrograph of AlN crystal grown at 1870°C, 400 torr for 2 hours on on-axis (0001) 6H-SiC substrate with about 1 µm SiC epitaxial layer. The magnification is 1003: (a) on-axis; (b) 8^o off-axis. (The real width of film in above image is about 1.0mm).

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