Figures

Figure 1

XRD rocking curves of symmetric (00.6) and asymmetric (20.5) reflections for 40 nm - thick In0.19Ga0.81N layer grown on GaN.

Figure 2

c-lattice constant vs. a-lattice constant for the InGaN layers on GaN. The vertical and dashed line marks GaN a-lattice parameter. The diagonal dashed line represent lattice constants dependence for relaxed InGaN with Vegard's law validity assumption.

Figure 3

Room-temperature PL spectra for the InGaN layers grown on GaN.

Figure 4

Measured emission energy dependence on the In content in the InGaN layers. Error bars represent the possible In content range (as measured from c-lattice constant) depending on the relaxation degree of the InGaN layers. Maximal In content in error bars corresponds to fully relaxed InGaN layers (with misfit dislocations), while minimal In content corresponds to InGaN layers pseudomorphic to GaN.

Figure 5

Emission energy dependence on the In content in the InGaN layers. "As is" published data are shown.

Figure 6

Emission energy dependence on the In content in the InGaN layers. Recalculated with the same Poisson's ratio published data are shown.

© 2001 The Materials Research Society