Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers


S. Stepanov, W.N.Wang
University of Bath

B.S.Yavich
University of Bath
and
Ioffe Physical-Technical Institute

V. Bougrov, Y.T.Rebane, Y.G.Shreter
Ioffe Physical-Technical Institute

This article was received on Friday, January 26, 2001 and accepted on Thursday, March 8, 2001.

Abstract

The composition dependence of emission energy of pseudomorphically strained InGaN layers with In content up to 0.2 is obtained. It is found that the main reason of "scatter" in published values of the InGaN bowing parameter is the uncertainty of the Poisson's ratio determination. It is shown that after recalculation to the same Poisson's ratio, most published data yield essentially the same results as compared to experimental uncertainty.

Outline

  • Introduction
  • Experimental
  • In content calculation
  • Bowing parameter
  • Poisson's ratio
  • Results
  • Conclusion
  • Acknowledgments
  • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 6, 6(2001).

    last updated Friday, May 11, 2001 2:15:48 PM.

    © 2001 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research