Figures

Figure 1

Optical micrographs of (AlN)x(SiC)1-x alloy crystal growth with magnification 60x on: (a) the as-received SiC substrates, (b) SiC substrates with AlN MOCVD buffer layer; (1-4) denote the growth time sequence of 15, 45, 120 minutes and 100 hours.

Figure 2

Photograph of pure AlN grown for 100 hours, one grid represents 1mm.

Figure 3

Pole figure of (a) symmetric (0002), and (b) asymmetric (112) plane for pure AlN crystal.

Figure 4

Raman spectra of pure AlN single crystal.

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