Optical micrographs of (AlN)x(SiC)1-x alloy crystal growth with magnification 60x on: (a) the as-received SiC substrates, (b) SiC substrates with AlN MOCVD buffer layer; (1-4) denote the growth time sequence of 15, 45, 120 minutes and 100 hours.
Photograph of pure AlN grown for 100 hours, one grid represents 1mm.
Pole figure of (a) symmetric (0002), and (b) asymmetric (112) plane for pure AlN crystal.
Raman spectra of pure AlN single crystal.