Figures

Figure 1

(a) The x-ray powder diffraction profiles along the surface normal qZ direction for the Au/Ni/GaN film measured during real-time annealing at several temperatures in N2. (b) The phi scans of GaN (1 0 -1 1) and Ni4N (1 1 -1) nonspecular reflections along the azimuthal direction for the figure 1 (a) sample after cooling. The well defined peaks indicate that Ni4N was grown epitaxially on GaN (000l).

Figure 2

AXS result of the figure 1 sample after cooling. The momentum transfer was fixed to the position of the Ni4N (111) reflection and the scattering intensity was monitored as the x-ray energy was varied through Ni K-edge absorption.

Figure 3

AXS results of the figure 1 sample after cooling, Ga K-edge absorption. The momentum transfer was fixed to the position of the Ni4N (111), Au (111), and Ni (111) reflections, respectively.

Figure 4

(a) Cross-sectional TEM image of GaN dislocation (indicated by an arrow) observed in the 550 °C annealed sample where metal indiffusion occurred. (b) HREM image of dislocation free region observed in the 700 °C annealed sample where atomically well defined interfacial structure is shown.

© 2001 The Materials Research Society