Figure 1

(a) The x-ray powder diffraction profiles along the surface normal q_Z direction for the Au/Ni/GaN film measured during real-time annealing at several temperatures in N₂. (b) The phi scans of GaN (1 0 -1 1) and Ni₄N (1 1 -1) nonspecular reflections along the azimuthal direction for the figure 1 (a) sample after cooling. The well defined peaks indicate that Ni₄N was grown epitaxially on GaN (000l).

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