High Temperature Elastic Constant Prediction of Some Group III-Nitrides


Robert R. Reeber, Kai Wang
Department of Materials Science and Engineering, North Carolina State University

This article was received on Tuesday, January 9, 2001 and accepted on Thursday, January 25, 2001.

Abstract

Thermoelastic properties are important for modeling thermal residual stresses and for optimizing the growth conditions of semiconductor thin films. Thermal expansions of AlN and GaN have been evaluated and predicted by us earlier [1] [2]. Here, high temperature elastic constants are estimated empirically from corresponding state relationships and data from other hexagonal Grimm-Sommerfeld compounds. This information together with our earlier thermal expansion data will further improve capabilities for calculating thermal residual stresses in various semiconductor thin films.

Outline

  • Introduction and Methods
  • Results
  • Discussion and Conclusions
  • Acknowledgments
  • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 6, 3(2001).

    last updated Tuesday, January 30, 2001 10:44:45 PM.

    © 2001 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research