(a) The ODCR spectrum arising from the GaAs layers (x=0) in the GaAsN/GaAs QWs structures when the excitation energy was tuned above the GaAs bandgap. (b)-(c) The ODCR spectra of the GaAsN QWs, when the excitation photon energy was tuned at 1.475 eV, i.e. below the GaAs bandgap but above the bandgap of the GaAsN QWs. The dashed lines represent experimental data. The solid lines are the fit curves [49] [58] by using effective mass values specified in the Figure.
© 2001 The Materials Research Society
