Figure 5a

Effects of hydrostatic pressure on the energies of the E_- and E₊ transitions in GaNAs. The blue triangles represent the RT photoreflectance (PR) data [31] for a GaNAs epitaxial layer with %N=1.5%. The blue lines are results from the BA calculations for the same structure [31]. The dashed and dashed-dotted lines represent the pressure dependencies of the CB edge (E) of GaAs and N-related level (E_N), respectively. The red lines show results of the LDA calculations [42] for GaNAs with %N=0.8%.

Figure 5b

Effects of hydrostatic pressure on the energies of the E_- and E₊ transitions in GaInNAs. The blue triangles represent the RT photoreflectance data [30] obtained for a GaInNAs epitaxial layer with %In = 5% and %N=1.2%. The blue lines show results from the BA calculations for the same structure [30], assuming a linear pressure dependence of the CB edge (~100 meV/GPa) and the N-related level (~15 meV/GPa), shown by dashed-dotted lines. The red dots show the PL data from Ref. 33 for a thick lattice-matched GaInNAs epilayer with %In = 7% and %N= 2%, for comparison. The red line represents the results of the LDA calculations [33] for the same structure, which are offset by 1.14 eV to achieve the agreement with the experiment at ambient pressure.

top        text     Figure 4     Figure 6        endnotes

© 2001 The Materials Research Society