Figure 3

Electroreflectance spectra at RT for thick GaAsN (a)-(h) and GaInNAs [(i) and (j)] films grown on a GaAs substrate. For GaNAs samples, the nitrogen composition ranges from x=0 (a) to x=2.8 % (h). For GaInAsN samples, the compositions are Ga_0.95In_0.05As_0.987N_0.013 (i) and Ga_0.92In_0.08As_0.978N_0.022 (j). (After Ref. [29])

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