RTA-induced improvement of the optical quality of the GaN0.011As0.989/GaAs MQW structure grown at 580 °C. The blue and red lines are related to the as-grown and RTA-treated samples, respectively. The solid lines represent PL spectra, the dotted lines represent PLE spectra. The minor change in the spectral position of the PLE spectra demonstrates a high thermal stability of the structure.
© 2001 The Materials Research Society
