Figure 22

Bright field XTEM micrographs of a RTA-annealed sample consisting of two-period Ga_0.7In_0.3N_0.02As_0.98/GaAs QWs (the bottom two layers) and two period Ga_0.7In_0.3As/GaAs QWs (the upper two layers). Note the higher lateral undulation for the N-containing QWs in spite of the lower average strain (Courtesy H. P. Xin).

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