Figure 2

Electroreflectance spectra at RT for a 2 µm thick GaAsN film on a GaAs substrate. The band gap transition (E₀) at 1.19 eV as well as the transition from the spin-orbit split-off VB (E₀+₀) at 1.52 eV are easily seen. An additional weak feature (E₊) at 1.83 eV is more clearly seen in the second spectrum at 10x and offset for clarity. The fitted line shape for the E₀+₀ and E₊ transitions are shown with dashed lines and offset for clarity. (After Ref. [29])

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