Schematic diagram of band lineup for GaInAs and GaNAs. The use of strain for the horizontal axis allows to demonstrate the effect of nitrogen on the band gap edges [12] (increasing the In content leads to a compressive strain, whereas increasing the N content causes a tensile strain). The arrows show the effect of nitrogen on the CB and VB edges of GaInAs. Dotted line and arrow are related to the theoretical predictions based on the dielectric model. Solid green arrow assumes the N-induced increase in the VB edge of GaInNAs, as predicted by the LDA [10] or tight-binding [39] calculations for the GaNAs alloy (shown by solid red line).
© 2001 The Materials Research Society
