Electronic Properties of Ga(In)NAs Alloys
I. A. Buyanova, W. M. Chen, B. Monemar
Department of Physics and Measurement Technology, Linköping University
This article was received on Thursday, November 9, 2000 and
accepted on Thursday, January 25, 2001. Abstract
A
brief review on the present knowledge of the electronic properties of the
Ga(In)NAs ternary and quaternary alloys is given mainly from an experimental
perspective. The discussion is focused on Ga(In)NAs with low N composition
(< 10 %), where a large amount of experimental work has been done. Important
fundamental electronic properties of the material system are analyzed with the
emphasis on the nature of the giant band gap bowing in the alloy and
nitrogen-induced modifications of the electronic structure of the conduction
band. The current knowledge of the key material parameters, relevant for the
device applications, such as electron effective mass, recombination processes
and band alignment in Ga(In)NAs/GaAs heterostructures, is also reviewed.
